| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device forming an upper layer bump on a lower layer bump without a grinding process, and also to provide its manufacturing method. <P>SOLUTION: The manufacturing method of the semiconductor element includes: a first step of forming the lower layer bump 5x on an underlying metallic layer 3 formed on a semiconductor substrate 1; a second step of applying flux 6 to the center region of the lower layer bump 5x in a plan view of the bump 5x; a third step of forming a resist layer 7 in a peripheral region except the center region of the bump 5x to have the flux 6 exposed; and a fourth step of supplying solder paste 5' onto the center region of the lower layer bump 5x and also heating the paste 5' to form the upper layer bump 5y on the lower layer bump 5x. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
