SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device, in which an optimal threshold voltage (Vt) can be obtained, and to provide its manufacturing method. SOLUTION: A manufacturing method of the semiconductor device comprises the steps of: forming pad oxide film and pad nitride film in order on a silicon substrate; forming trench in element isolation region by etching the pad nitride film and pad oxide film and the silicon substrate; forming insulating film spacer in a side wall of the trench; forming vacant space in an active region of the silicon substrate by performing lateral direction etching using the insulating film spacer and etched pad nitride film as etching barrier; removing the insulating film spacer; forming a conductive electrode for applying external voltage for adjusting a potential of body region of the substrate through the insulating film on a front surface of the space; and forming element isolating film by embedding the oxide film inside the trench. COPYRIGHT: (C)2006,JPO&NCIPI