| 摘要 |
A method for producing single crystal through pulling up a seed crystal from a raw material melt by the Czochralski method, characterized in that, when the speed of pulling up the single crystal is represented by V (mm/min), the temperature gradient at a solid-liquid interface is represented by G (K/mm), and the maximum temperature at an interface of a crucible and the raw material melt is represented by Tmax (°C), it comprises determining the range of a V/G value (mm2/K min) having a desired defect zone and/or a desired non-defect zone, and pulling up the single crystal while controlling the value of V/G (mm 2/K min) in the range thus determined. The method allows more accurate determination of a V/G value having a desired defect zone and/or a desired non-defect zone in pulling up a single crystal while controlling a value of V/G, which results in the pull-up of a single crystal having a desired quality with enhanced reliability.
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