| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a high output semiconductor light emitting device and its manufacturing method, wherein, as having a semiconductor layer of a good quality crystal structure with less dislocation, a light emitting area can be increased by increasing a light emitting output or having an active layer containing unevenness, and also emitted light can also be fetched to an inclined direction with respect to a substrate. <P>SOLUTION: A nitride system semiconductor light emitting device is composed of a group III nitride system compound represented by AlxGayIn1-x-yN (wherein 1≥x≥0, 1≥y≥0, 1≥x+y≥0). The semiconductor light emitting device contains a buffer layer formed for forming a semiconductor layer on the substrate; a first mask layer which contains a first mask covering a part of the surface of the buffer layer, and a first exposure part which exposes a part of the surface on the buffer layer; a first semiconductor layer formed by epitaxial growth on the first mask layer; a second mask layer which contains a second mask which covers an area formed above the center of the first mask part and an area formed above the center of the first exposure part, and a second exposure part which exposes a part of the surface of the first semiconductor layer; a second semiconductor layer which is formed on the second mask layer by the epitaxial growth and has a surface formed with an unevenness; and an active layer formed on the second semiconductor layer. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
