| 摘要 |
PROBLEM TO BE SOLVED: To provide a thin-film transistor having high-speed response properties, and to provide a method for manufacturing the thin-film transistor. SOLUTION: A DC voltage is applied to a set of targets A, B that are opposingly arranged in a film-forming chamber 124 while at least one of them is made of highly pure zinc for sputtering by plasma generated between both the targets A, B. A Zn particle in the targets A, B being subjected to sputtering is allowed to react with oxygen gas, and is arranged while being shifted from the axial direction of the opposing target, and is deposited on a substrate in which a gate electrode is formed for forming a ZnO film corresponding to the gate electrode. COPYRIGHT: (C)2006,JPO&NCIPI
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