GROUP III NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE

摘要

It is an object of the present invention to provide a simple and reliable method for forming a rough structure having inclined side surfaces in a light emitting device, and to provide a group III nitride semiconductor light emitting device that is obtained by the method and is excellent in light extraction efficiency. The inventive group III nitride semiconductor light emitting device comprising group III nitride semiconductor formed on a substrate comprises a first layer of Ge doped group III nitride semiconductor having pits on the surface thereof, and a second layer adjoining on the first layer and having a refractive index different from that of the first layer.