发明名称 High speed memory modules
摘要 Apparatus and method for producing memory modules having a plurality of branches connected to a memory bus, each branch containing at least one dynamic random access memory (DRAM) device or synchronous random access memory (SDRAM) device connected to the memory bus via at least one transmission signal (TS) line and/or at least one sub-transmission signal (STS) line. The memory modules include at least one branch containing a resistor connected to the TS line or STS line and connected series with the DRAM device or SDRAM device and connected to the memory bus. A computing system implementing the memory modules is also discussed.
申请公布号 US2005289284(A1) 申请公布日期 2005.12.29
申请号 US20040877588 申请日期 2004.06.24
申请人 CHANG GE 发明人 CHANG GE
分类号 G06F12/00;G06F13/40;(IPC1-7):G06F12/00 主分类号 G06F12/00
代理机构 代理人
主权项
地址
您可能感兴趣的专利