| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which restrains power dissipation of parasitic diode. SOLUTION: The semiconductor device is constituted of an SOI substrate 1, a gate electrode 13, an n<SP>+</SP>-type source region 7 and an n<SP>+</SP>-type drain region 10. On an upper surface of the SOI substrate 1, the upper surface pattern of a race track profile is formed wherein a p-type body region 5 and a gate electrode 13 are formed outside at the center of the n<SP>+</SP>-type drain region 10. The n<SP>+</SP>-type source region 7 is formed along a part of the straight line of the race track profile and not formed along the other portion of the straight line and a radius. COPYRIGHT: (C)2006,JPO&NCIPI
|
