| 摘要 |
Systems and methods for performing inspection and metrology operations on metallization processes such as on back-end-of-line (BEOL) metallization thickness and step coverage are disclosed. Specific examples include measurements of thickness and uniformity of barrier layers, including tantalum for example, and seed layers, including copper for example, in Damascene, including dual-Damascene, trenches during the interconnect fabrication steps of integrated circuit production. The invention also relates to the detection and measurement of void formation during and after copper electroplating. The invention utilizes x-ray fluorescence to measure the absolute thicknesses and the thickness uniformity of the barrier layers in the trenches, the copper seed layers for electroplating, and the final copper interconnects.
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