发明名称 |
High-powered light emitting device with improved thermal properties |
摘要 |
A light emitting device includes a first semiconductor layer of a first conductivity type, an active region, and a second semiconductor layer of a second conductivity type. First and second contacts are connected to the first and second semiconductor layers. In some embodiments at least one of the first and second contacts has a thickness greater than 3.5 microns. In some embodiments, a first heat extraction layer is connected to one of the first and second contacts. In some embodiments, one of the first and second contacts is connected to a submount by a solder interconnect having a length greater than a width. In some embodiments, an underfill is disposed between a submount and one of the first and second interconnects.
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申请公布号 |
US6977396(B2) |
申请公布日期 |
2005.12.20 |
申请号 |
US20030369714 |
申请日期 |
2003.02.19 |
申请人 |
LUMILEDS LIGHTING U.S., LLC |
发明人 |
SHEN YU-CHEN;STEIGERWALD DANIEL A.;MARTIN PAUL S. |
分类号 |
H01L33/38;H01L33/62;(IPC1-7):H01L33/00 |
主分类号 |
H01L33/38 |
代理机构 |
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