发明名称 Enhanced sputter target alloy compositions
摘要 A sputter target, where the sputter target is comprised of cobalt (Co), greater than 0 and as much as 24 atomic percent chromium (Cr), greater than 0 and as much as 20 atomic percent platinum (Pt), greater than 0 and as much as 20 atomic percent boron (B), and greater than 0 and as much as 10 atomic percent gold (Au). The sputter target is further comprised of X<SUB>1</SUB>, where X<SUB>1 </SUB>is selected from the group consisting of tungsten (W), yttrium (Y), manganese (Mn), and molybdenum (Mo). The sputter target is further comprised of 0 to 7 atomic percent X<SUB>2</SUB>, wherein X<SUB>2 </SUB>is an element selected from the group consisting of titanium (Ti), vanadium (V), zirconium (Zr), niobium (Nb), ruthenium (Ru), rhodium (Rh), palladium (Pd), hafnium (Hf), tantalum (Ta), and iridium (Ir).
申请公布号 US2005274221(A1) 申请公布日期 2005.12.15
申请号 US20050183968 申请日期 2005.07.19
申请人 HERAEUS, INC. 发明人 ZIANI ABDELOUAHAB;CHENG YUANDA R.;KUNKEL BERND;BARTHOLOMEUSZ MICHAEL
分类号 C23C14/00;C23C14/14;C23C14/34;G11B5/64;G11B5/65;G11B5/851;(IPC1-7):C23C14/00 主分类号 C23C14/00
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