| 摘要 |
PROBLEM TO BE SOLVED: To provide a film forming apparatus, capable of suppressing the deposition of a reaction product to a compound forming gas discharge outlet of a shower head upon forming a metal compound film on a substrate by source gas containing metal and by compound forming gas for forming a compound with the metal. SOLUTION: The film forming apparatus 1 includes a processing container 2 for containing a semiconductor wafer W, and the shower head 40 provided in the processing container 2, for independently separately discharging source gas containing metal and oxidized gas; and forms a PZT film of a metal oxide on the wafer W. In the film forming apparatus 1, the shower head 40 has, in its bottom surface, a plurality of stock gas discharge outlets 44a for discharging the source gas and a plurality of oxidized gas discharge outlets 44b, the bottom surface including a groove 44 therein, the stock gas discharge outlets 44a, being provided at a portion other than the groove 44 in the bottom surface, and the oxidized gas discharge outlets 44b being provided in the groove 44. COPYRIGHT: (C)2006,JPO&NCIPI
|
