| 摘要 |
PROBLEM TO BE SOLVED: To enhance uniformity of resistance of a Cu wiring in the wafer surface by preventing a low-k film from being cut too much. SOLUTION: The process for fabricating a semiconductor device comprises a step for forming a low-k film (S106) on a substrate, a step for forming an SiOC film being polished more easily than the low-k film on the low-k film (S110), a step for forming an opening in the SiOC film and the low-k film (S112), a step for depositing a conductive material on the SiOC film and in the opening (S114-S118), and a step for removing Cu and SiOC films deposited on the SiOC film by polishing (S120, S122). COPYRIGHT: (C)2006,JPO&NCIPI
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