| 摘要 |
An SOI wafer wherein a silicon active layer is formed at least on a supporting substrate directly or via an insulating film is characterized in that the silicon active layer is a P- doped (phosphorous-doped) silicon single crystal in the N region and/or the defect-free I region grown by the Czochralski method and contains Al (aluminum) with a concentration of 2 x 1012 atoms/cc or more. Consequently, even when the silicon active layer is formed extremely thin, the SOI wafer does not suffer from very small pits that are conventionally caused by hydrofluoric acid cleaning or the like, and thus has excellent electrical properties. The SOI wafer also maintains a high insulating property even when the interlayer insulating film is formed extremely thin, and thus shows high electric reliability during the device production process. Further, this SOI wafer can be simply manufactured at low cost.
|
