POSITIVE RESIST MATERIAL AND PATTERN FORMING PROCESS USING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a positive resist material having a high sensitivity and a high resolution in exposure with a high energy line and ensuring a minimal line edge roughness and little residue after development.

SOLUTION: The positive resist material such as a chemically amplified positive resist material which is suitable for use particularly as a fine pattern forming material for manufacture of VLSI or in production of a photomask pattern is obtained by using a resist material containing a high molecular compound having repeating units of formulae (1a), (2a) and (1b).

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