| 摘要 |
PROBLEM TO BE SOLVED: To provide vapor phase epitaxy equipment which equalizes temperature distribution of gas in a perimeter region of a processed substrate and reduces variation of composition and thickness of a thin film formed on the processed substrate. SOLUTION: In the vapor phase epitaxy equipment 20 which forms the thin film on the processed substrate 21 by using gas as material, a heating means 37 is arranged in a reaction tube 23 which means heats the gas introduced in the direction which meets in a depositing surface of the processed substrate 21. A control means 30 with which the heating means 37 is equipped performs motion control of a heater power supply 28 and a drive means 29 in response to detection output of a temperature sensor 26 which measures temperature at a predetermined source position in the reaction tube 23, adjusts source position and calorific value of a gas heating heater 27 individually, and heats introduced gas. The gas heated at suitable temperature in a suitable source position in the reaction tube 23 forms uniform temperature distribution at a part in the vicinity of the processed substrate 21. COPYRIGHT: (C)2006,JPO&NCIPI
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