发明名称 PHOTOELECTRIC CONVERSION DEVICE AND MANUFACTURING METHOD THEREOF
摘要 <p>The present invention, in a photoelectric conversion device in which a pixel including a photoelectric conversion device for converting a light into a signal charge and a peripheral circuit including a circuit for processing the signal charge outside a pixel region in which the pixel are disposed on the same substrate, comprising: a first semiconductor region of a first conductivity type for forming the photoelectric region, the first semiconductor region being formed in a second semiconductor region of a second conductivity type; and a third semiconductor region of the first conductivity type and a fourth semiconductor region of the second conductivity type for forming the peripheral circuit, the third and fourth semiconductor regions being formed in the second semiconductor region; wherein in that the impurity concentration of the first semiconductor region is higher than the impurity concentration of the third semiconductor region.</p>
申请公布号 WO2005109512(A1) 申请公布日期 2005.11.17
申请号 WO2005JP08467 申请日期 2005.04.27
申请人 CANON KABUSHIKI KAISHA;TAMURA, SEIICHI;YUZURIHARA, HIROSHI;ICHIKAWA, TAKESHI;MISHIMA, RYUICHI 发明人 TAMURA, SEIICHI;YUZURIHARA, HIROSHI;ICHIKAWA, TAKESHI;MISHIMA, RYUICHI
分类号 H01L27/146;H04N5/335;H04N5/374;(IPC1-7):H01L27/146 主分类号 H01L27/146
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