发明名称 |
PHOTOELECTRIC CONVERSION DEVICE AND MANUFACTURING METHOD THEREOF |
摘要 |
<p>The present invention, in a photoelectric conversion device in which a pixel including a photoelectric conversion device for converting a light into a signal charge and a peripheral circuit including a circuit for processing the signal charge outside a pixel region in which the pixel are disposed on the same substrate, comprising: a first semiconductor region of a first conductivity type for forming the photoelectric region, the first semiconductor region being formed in a second semiconductor region of a second conductivity type; and a third semiconductor region of the first conductivity type and a fourth semiconductor region of the second conductivity type for forming the peripheral circuit, the third and fourth semiconductor regions being formed in the second semiconductor region; wherein in that the impurity concentration of the first semiconductor region is higher than the impurity concentration of the third semiconductor region.</p> |
申请公布号 |
WO2005109512(A1) |
申请公布日期 |
2005.11.17 |
申请号 |
WO2005JP08467 |
申请日期 |
2005.04.27 |
申请人 |
CANON KABUSHIKI KAISHA;TAMURA, SEIICHI;YUZURIHARA, HIROSHI;ICHIKAWA, TAKESHI;MISHIMA, RYUICHI |
发明人 |
TAMURA, SEIICHI;YUZURIHARA, HIROSHI;ICHIKAWA, TAKESHI;MISHIMA, RYUICHI |
分类号 |
H01L27/146;H04N5/335;H04N5/374;(IPC1-7):H01L27/146 |
主分类号 |
H01L27/146 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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