| 摘要 |
A multi-I/O repair method of a NAND flash memory device and a NAND flash memory device thereof are disclosed. A NAND flash memory device is disclosed in which page buffers are positioned at the top and bottom of a main array and a redundancy array and have different data lines. The top/bottom page buffers of the redundancy array are all selected according to an external address and data is transmitted over redundancy data lines, and this data is finally selected through a data line select unit. Accordingly, if main columns having different addresses are to be repaired, they can be replaced with redundancy columns one to one and multi-I/O repair of two main columns having the same address is thus possible.
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