| 摘要 |
In order to improve embeddability of an embedded insulating film to a filling portion to have a preferable embedded structure, the present invention provides a semiconductor device having an embedded structure in which an embedded insulating film is embedded in a filling portion formed in or on a substrate. The embedded structure includes an underlying insulating film containing a silicon nitride film formed on an inner wall of the filling portion by a chemical vapor deposition method using material gas containing hexachlorodisilane, and an embedded insulating film formed by filling in the filling portion via the underlying insulating film. <IMAGE>
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