| 摘要 |
PROBLEM TO BE SOLVED: To provide a solid-state image pickup element in a structure capable of suppressing the decline of sensitivity due to the reduction of a pixel cell size, and being easily and stably manufactured. SOLUTION: For the solid-state image pickup element, a light receiving sensor 1 is formed inside a semiconductor base body 11, first conducting type impurity regions 21, 22 and 23 are formed under the first conducting type charge storage region 14 of the light receiving sensor 1, and at least a deepest part 23 is formed over the entire image pickup region including the light receiving sensor 1 for the first conducting type impurity regions 21, 22 and 23. COPYRIGHT: (C)2006,JPO&NCIPI
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