| 摘要 |
PROBLEM TO BE SOLVED: To realize a manufacturing method of drain-extended transistor with the low possibility of high voltage breakdown, and to provide a transistor which does not need to have another step added to the present process. SOLUTION: In an embodiment of the present invention, a transistor (100) is provided. The transistor (100) comprises a doped semiconductor substrate (105) and a gate structure (110) on the semiconductor substrate, and the gate structure (110) has a gate corner (125). Moreover, the transistor (100) includes a drain diffusion well (115), surrounded by the doped semiconductor substrate (105). The drain diffusion well (115) has a dopant type, which has dopant type opposite to that of the doped semiconductor substrate (105). In addition, the drain diffusion well (115) has lightly-doped regions (145) between heavily-doped regions (150), and an end portion of the lightly-doped region (155) substantially coincides with the outer peripheral portion (140) defined by the gate corner (125). Other embodiments of the present invention include the manufacturing method of the transistor and an integrated circuit. COPYRIGHT: (C)2006,JPO&NCIPI
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