| 摘要 |
A layer of compressive alpha-tantalum is formed on a substrate by depositing a buffer layer on the substrate and depositing a layer of compressive alpha-tantalum on the buffer layer with lattice matching between the layer of compressive alpha-tantalum and the buffer layer. A bias may be applied to the substrate during deposition of the buffer layer and/or compressive alpha-tantalum layer. In some embodiments, the method may include depositing buffers layers comprising titanium, niobium, substantially pure aluminum or aluminum-copper alloy.
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