| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing an epitaxial substrate where a III group nitride semiconductor epitaxial film with fewer crystal defects can be formed on an Al<SB>X</SB>Ga<SB>1-X</SB>N substrate. SOLUTION: In the method for manufacturing the epitaxial substrate, Al<SB>Y1</SB>Ga<SB>Y2</SB>In<SB>1-Y1-Y2</SB>N amorphous film 23 (0≤Y1≤1, 0≤Y2≤1 and Y1+Y2≤1) is formed on a polished main face 1a of an Al<SB>X</SB>Ga<SB>1-X</SB>N substrate 21 (0<X≤1). Heat treatment 25 is performed on the Al<SB>Y1</SB>Ga<SB>Y2</SB>In<SB>1-Y1-Y2</SB>N amorphous film 23 after the Al<SB>Y1</SB>Ga<SB>Y2</SB>In<SB>1-Y1-Y2</SB>N amorphous film 23 is formed. An Al<SB>Y3</SB>Ga<SB>Y4</SB>In<SB>1-Y3-Y4</SB>N single crystal film 27 (0≤Y3≤1, 0≤Y4≤1, 0≤Y3+Y4≤1) is formed. An Al<SB>Z1</SB>Ga<SB>Z2</SB>In<SB>1-Z1-Z2</SB>N film 29 (0≤Z1≤1, 0≤Z2≤1 and 0≤Z1+Z2≤1) is epitaxially grown after the Al<SB>Y3</SB>Ga<SB>Y4</SB>In<SB>1-Y3-Y4</SB>N single crystal film 27 is formed. COPYRIGHT: (C)2006,JPO&NCIPI
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