发明名称 |
COMPOUND COMPRISING AT LEAST ONE MEMORY UNIT CONSISTING OF AN ORGANIC MEMORY MATERIAL, ESPECIALLY FOR USING IN CMOS STRUCTURES, SEMICONDUCTOR COMPONENT, AND METHOD FOR PRODUCING A SEMICONDUCTOR COMPONENT |
摘要 |
The invention relates to a compound comprising at least one memory unit consisting of an organic memory material, especially for using in CMOS structures, said compound being characterised by a) at least one first anchor group (1) provided with a reactive group for covalently bonding to a first electrode (10), especially a bottom electrode of a memory cell (102), and b) at least one second anchor group (2) provided with a reactive group for bonding to a second electrode (20), especially a top electrode of a memory cell (102). The invention also relates to a semiconductor component, and to a method for producing a semiconductor component. The invention thus provides a compound, a semiconductor component, and a method for producing the semiconductor component, by which means molecular memory layers can be efficiently formed on conventional substrates. |
申请公布号 |
WO2005022658(A3) |
申请公布日期 |
2005.11.03 |
申请号 |
WO2004DE01936 |
申请日期 |
2004.08.27 |
申请人 |
INFINEON TECHNOLOGIES AG;HALIK, MARCUS;KLAUK, HAGEN;SCHMID, GUENTER;ZSCHIESCHANG, UTE |
发明人 |
HALIK, MARCUS;KLAUK, HAGEN;SCHMID, GUENTER;ZSCHIESCHANG, UTE |
分类号 |
G11C13/02;H01L27/28;H01L51/00;H01L51/05;H01L51/30;H01L51/40 |
主分类号 |
G11C13/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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