发明名称 |
Gan single crystal substrate. |
摘要 |
A freestanding GaN single crystal substrate is made by the steps of preparing a (111) GaAs single crystal substrate, forming a mask having periodically arranged windows on the (111) GaAs substrate, making thin GaN buffer layers on the GaAs substrate in the windows of the mask, growing a GaN epitaxial layer on the buffer layers and the mask by an HVPE or an MOC, eliminating the GaAs substrate and the mask away and obtaining a freestanding GaN single crystal substrate. The GaN single crystal has a diameter larger than 20mm and a thickness more than 0.07mm, being freestanding and substantially distortion-free. <IMAGE> <IMAGE> <IMAGE> <IMAGE> |
申请公布号 |
HK1024099(A1) |
申请公布日期 |
2005.10.28 |
申请号 |
HK20000103240 |
申请日期 |
2000.05.31 |
申请人 |
SUMITOMO ELECTRIC INDUSTRIES, LTD. |
发明人 |
KENSAKU MOTOKI;TAKUJI OKAHISA;TAOKI MATSUMOTO;TATSUYA NISHIMOTO |
分类号 |
C30B25/02;H01L21/20;H01L33/00;H01L33/32;(IPC1-7):H01L |
主分类号 |
C30B25/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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