| 摘要 |
[PROBLEMS] To provide a semiconductor element capable of reducing the manufacturing time and improving the yield, cost, and reliability by changing the structure of the conventional through-type electrode and capable of reducing the chip itself by effectively utilizing the space in the semiconductor element and performing high-speed operation. [MEANS FOR SOLVING PROBLEMS] Through-type electrodes (31, 32) are formed penetrating from the front surface to the rear surface of a single crystal semiconductor substrate (1). Since the through-type electrodes (31, 32) are formed not reaching a multi-layer metal wiring layer above the surface of the semiconductor substrate, it is possible to obtain a simple structure, reduce the manufacturing time, improve the yield, the cost, the reliability, and effectively use the portion right above the through-type electrodes in the upper layer portion above the surface of the semiconductor substrate (1). |
