发明名称 |
GALLIUM NITRIDE BASED LIGHT-EMITTING DEVICE |
摘要 |
<p>A light-emitting device employing a GaN based semiconductor comprising an n-type cladding layer (124), an active layer (129) consisting of an n-type first barrier layer (126), a well layer (128) and a second barrier layer (130), a p-type block layer (132), and a p-type cladding layer (134). By setting the relation among the band gap energy Egb of the p-type block layer (132), the band gap energy Eg2 of the second barrier layer (130), the band gap energy Eg1 of the first barrier layer (126) and the band gap energy Egc of the n-type and p-type cladding layers (124, 134) to be Egb > Eg2 > Eg1 >= Egc, carriers are confined efficiently, thereby increasing the emission intensity.</p> |
申请公布号 |
WO2005101532(A1) |
申请公布日期 |
2005.10.27 |
申请号 |
WO2004JP05475 |
申请日期 |
2004.04.16 |
申请人 |
NITRIDE SEMICONDUCTORS CO., LTD.;SATO, HISAO;WADA, NAOKI;SAKAI, SHIRO;KIMURA, MASAHIRO |
发明人 |
SATO, HISAO;WADA, NAOKI;SAKAI, SHIRO;KIMURA, MASAHIRO |
分类号 |
H01L33/06;H01L33/12;H01L33/32;H01S5/02;H01S5/20;H01S5/22;H01S5/30;H01S5/32;H01S5/34;H01S5/343;(IPC1-7):H01L33/00 |
主分类号 |
H01L33/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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