| 发明名称 |
SILICON LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME |
| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a silicon light emitting device and method of manufacturing the same in which the silicon carbon nitride film is formed on at least either the upper or lower side of the silicon light emitting layer to improve the emitting efficiency in the region of the near infrared ray, visible light and ultraviolet. <P>SOLUTION: In a silicon light emitting device having a silicon light emitting layer and electrodes that apply a voltage difference between both sides of the silicon light emitting layer, the silicon light emitting layer has a silicon carbon nitride film on at least either the upper or lower side for improving the light emitting efficiency. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
| 申请公布号 |
JP2005303259(A) |
申请公布日期 |
2005.10.27 |
| 申请号 |
JP20040319399 |
申请日期 |
2004.11.02 |
| 申请人 |
KOREA ELECTRONICS TELECOMMUN |
发明人 |
PARK NAE MAN;KIM TAE YOUB;KIM KYUNG HYUN;SUNG GUN YONG |
| 分类号 |
H01L21/203;H01L21/205;H01L33/18;H01L33/34 |
主分类号 |
H01L21/203 |
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