发明名称 |
Semiconductor Heat-Dissipating Substrate, and Manufacturing Method and Package Therefor |
摘要 |
In a semiconductor heat-dissipating substrate made of a Cu-W alloy whose pores have been infiltrated with copper, being a porous tungsten body whose pore diameter at a specific cumulative surface area of 95% is 0.3 mum or more, and whose pore diameter at a specific cumulative surface area of 5% is 30 mum or less, thermal conductivity of 210 W/m.K or more is obtained by decreasing the content of iron-family metal to be less than 0.02 weight %. Likewise, changing the amount of infiltrated copper in a molded object by utilizing a multi-shaft press to vary the amount of vesicles in the middle and peripheral portions makes for offering at low cost a semiconductor heat-dissipating substrate that in between middle and peripheral portions made of different materials does not have bonding matter. |
申请公布号 |
US2005230819(A1) |
申请公布日期 |
2005.10.20 |
申请号 |
US20050160691 |
申请日期 |
2005.07.06 |
申请人 |
SUMITOMO ELECTRIC INDUSTRIES, LTD. |
发明人 |
TAKASHIMA KOUICHI;YAMAGATA SHIN-ICHI;ABE YUGAKU;SASAME AKIRA |
分类号 |
H01L23/34;H01L21/52;H01L23/36;H01L23/373;H01L23/40;(IPC1-7):H01L23/34 |
主分类号 |
H01L23/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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