Method of manufacturing a semiconductor device

摘要

A method of manufacturing a semiconductor device is disclosed. An oxide layer for regulating ion-implantation is formed before the implantation of the impurities into a predetermined region of a P-lightly doped drained (LDD) to regulate the implantation state of P type impurities into the corresponding predetermined region of P-LDD based on the oxide layer for regulating the ion-implantation so that the PMOS side predetermined channel length is elongated longer that the NMOS side predetermined channel length. A method of manufacturing a semiconductor device is also disclosed, wherein separate spacers are selected and formed on a different scales before the implantation of the impurities into predetermined regions of P-LDD and an N-LDD to regulate the implantation state of impurities into the respective predetermined regions of the LDD based on the differently scaled spacers so that the PMOS and NMOS side predetermined channel lengths are selectively regulated.