发明名称 |
Methods for planarization of dielectric layer around metal patterns for optical efficiency enhancement |
摘要 |
A method and system for improving planarization and uniformity of dielectric layers for providing improved optical efficiency in CCD and CMOS image sensor devices. In various embodiments, a dielectric planarization method for achieving better optical efficiency includes first depositing a first dielectric having an optically transparent property on and around a metal pattern. Optical sensors are formed in or on the substrate in areas between metal features. The metal pattern protects a sensor situated therebetween and thereunder from electromagnetic radiation. After the first dielectric layer is polished using CMP, a slanted or inclined surface is produced but this non-uniformity is eliminated using further planarization processes that produce a uniform total dielectric thickness for the proper functioning of the sensor.
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申请公布号 |
US2005227490(A1) |
申请公布日期 |
2005.10.13 |
申请号 |
US20050084228 |
申请日期 |
2005.03.16 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
HSIEH YEOU-LANG;LIN CHIN-MIN;WANG JIANN-JONG |
分类号 |
H01L27/14;H01L21/00;H01L21/4763;H01L21/768;(IPC1-7):H01L21/476 |
主分类号 |
H01L27/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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