发明名称 APPARATUS AND METHODS FOR MULTI-LEVEL SENSING IN A MEMORY ARRAY
摘要 A method for sensing a signal received from an array cell within a memory array, the method comprising the steps of generating an analog voltage Vddr proportional to a current of a selected array cell of the memory array, and comparing the analog voltage Vddr with a reference analog voltage Vcomp to generate an output digital signal. A method is also provided for sensing a memory cell by transforming a signal from a memory cell to a time delay, and sensing the memory cell by comparing the time delay to a time delay of a reference cell. Related apparatus is also disclosed.
申请公布号 WO2005091714(A2) 申请公布日期 2005.10.06
申请号 WO2004IL01107 申请日期 2004.12.06
申请人 SAIFUN SEMICONDUCTORS LTD.;DADASHEV, OLEG 发明人 DADASHEV, OLEG
分类号 G11C11/56 主分类号 G11C11/56
代理机构 代理人
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