PLASMA TREATMENT METHOD AND PLASMA TREATMENT APPARATUS

摘要

PROBLEM TO BE SOLVED: To provide a plasma treatment apparatus capable of applying always uniform plasma treatment to each semiconductor wafer by effectively controlling any variation of a process qualification of each semiconductor wafer on occasions.

SOLUTION: A plasma treatment method is applied to the treatment apparatus performing the plasma treatment to semiconductor wafers arranged on an electrode by applying a high frequency electric power to the electrode arranged at an airtight processor. There is provided means for variably controlling parameters of an electrostatic capacity in plasma in order to detect Vpp during a semiconductor wafer processing in a Vpp detector and to always maintain the Vpp in a desired status.

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