发明名称 Verfahren und Photomaske zur Herstellung eines integrierten Schaltkreisbauelements mit einer Stufe
摘要 A method for forming a uniform conductive pattern on an integrated circuit substrate having a step by a single photography process. An exposure mask has a different pattern in accordance with the topology of the integrated circuit substrate. The exposure mask has a increased inter-pattern space at a lower portion of the step and has a reduced inter-pattern space at a upper portion of the step. During the exposure process, a sufficient amount of light is applied to a photoresist layer at the lower portion of the step and an optical amount of light is applied to the photoresist layer at the upper portion of the step. As a result, scum phenomenon at the lower portion of the step can be prevented. Further, overetching of the conductive pattern at the upper portion of the step can be prevented.
申请公布号 DE19930296(B4) 申请公布日期 2005.10.06
申请号 DE1999130296 申请日期 1999.07.01
申请人 SAMSUNG ELECTRONICS CO. LTD., SUWON 发明人 SHIN, JONG-CHAN
分类号 G03F1/14;H01L21/027;H01L21/28;H01L21/3213;H01L21/768 主分类号 G03F1/14
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