发明名称 |
Verfahren und Photomaske zur Herstellung eines integrierten Schaltkreisbauelements mit einer Stufe |
摘要 |
A method for forming a uniform conductive pattern on an integrated circuit substrate having a step by a single photography process. An exposure mask has a different pattern in accordance with the topology of the integrated circuit substrate. The exposure mask has a increased inter-pattern space at a lower portion of the step and has a reduced inter-pattern space at a upper portion of the step. During the exposure process, a sufficient amount of light is applied to a photoresist layer at the lower portion of the step and an optical amount of light is applied to the photoresist layer at the upper portion of the step. As a result, scum phenomenon at the lower portion of the step can be prevented. Further, overetching of the conductive pattern at the upper portion of the step can be prevented. |
申请公布号 |
DE19930296(B4) |
申请公布日期 |
2005.10.06 |
申请号 |
DE1999130296 |
申请日期 |
1999.07.01 |
申请人 |
SAMSUNG ELECTRONICS CO. LTD., SUWON |
发明人 |
SHIN, JONG-CHAN |
分类号 |
G03F1/14;H01L21/027;H01L21/28;H01L21/3213;H01L21/768 |
主分类号 |
G03F1/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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