FLASH MEMORY DEVICE UTILIZING NANOCRYSTALS EMBEDED IN POLYMER

摘要

The present invention relates to a flash memory device with a nanoscale floating gate and a method for manufacturing thereof, more particularly, the flash memory device with a nanoscale floating gate of highly efficient and cost effective by utilizing self-assembled nanocrystals embedded in a polymer film. The present invention provides much simpler and easier method for manufacturing nanocrystalines for the flash memory device than the conventional method. Since the nanocrystalines is homogeneously dispersed as a polymer layer without agglomeration, size and density of the nanoparticles may be controlled. Additionally, the present invention provides memory devices with nanoscale floating gates of high efficient and cost effective and the method for manufacturing the same by employing electrically and chemically more stable nanosacle floating gates compared to the conventional ones.