Diamond single crystal substrate

摘要

A diamond single crystal substrate obtained by a vapor-phase growth method, wherein the diamond intrinsic Raman shift of the diamond single crystal substrate surface measured by microscopic Raman spectroscopy with a focused beam spot diameter of excitation light of 2 mum is deviated by +0.5 cm^-1 or more to +3.0 cm^-1 or less from the standard Raman shift quantity of strain-free diamond, in a region (region A) which is more than 0% to not more than 25% of the surface, and is deviated by -1.0 cm^-1 or more to less than +0.5 cm^-1 from the standard Raman shift quantity of strain-free diamond, in a region (region B) of the surface other than the region A. The diamond single crystal substrate can be obtained with a large size and high-quality without cracking and is suitable for semiconductor materials, electronic components, and optical components or the like.