发明名称 CMOS image sensor integrated together with memory device
摘要 The present invention relates to a CMOS (Complementary Metal Oxide Silicon) image sensor; and, more particularly, to an image sensor integrated into one chip, together with a memory. The CMOS image sensor according to the present invention comprises: a pixel array formed on a chip, having a plurality of unit pixels; a logic circuit formed on the chip to process signals form the pixel array; and a memory formed on the chip to store outputs from the logic circuit, wherein the pixel array, the logic circuit and the memory are isolated from each other by insulating layers, whereby the pixel array, the logic circuit and the memory are integrated on the same chip.
申请公布号 US6949388(B2) 申请公布日期 2005.09.27
申请号 US20030436564 申请日期 2003.05.12
申请人 HYNIX SEMICONDUCTOR INC. 发明人 PARK SANG HOON
分类号 H01L27/10;G11C13/04;H01L21/8242;H01L27/108;H01L27/146;(IPC1-7):H01L21/00;H01L21/84 主分类号 H01L27/10
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