PROCESS FOR FABRICATING SEMICONDUCTOR DEVICE

摘要

A process for fabricating a semiconductor device in which voids and pores can be eliminated from an interlayer insulating film at a lower heat treatment temperature than conventional methods. An anti-oxidation layer (2) for preventing intrusion of moisture into an element, an expansion layer (3) which can be expanded through oxidation when it is heat treated in an oxidizing atmosphere, and an insulating film (4) which can be fluidized through heat treatment in an oxidizing atmosphere are deposited on protrusions and recesses (1) formed by the element on a semiconductor substrate (11). The semiconductor substrate (11) is heat treated in an oxidizing atmosphere in order to fluidize the insulating film (4) and to expand the expansion layer (3) through oxidation, thereby eliminating air bubbles (5) generated in the insulating film (4).