发明名称 Method of producing self-aligned mask in conjuction with blocking mask, articles produced by same and composition for same
摘要 A method of forming a self aligned pattern on an existing pattern on a substrate including applying a coating of a solution containing a masking material in a carrier, the masking material being either photo or thermally sensitive; performing a blanket exposure of the substrate; and allowing at least a portion of the masking material to preferentially develop in a fashion that replicates the existing pattern of the substrate. The existing pattern includes a first set of regions of the substrate having a first reflectivity and a second set of regions of the substrate having a second reflectivity different from the first composition. The first set of regions can include one or more metal elements and the second set of regions can include one or more dielectrics. Structures made in accordance with the method. A low resolution mask is used to block out regions over the substrate. Additionally, the resist can be applied over another masking layer that contains a separate pattern.
申请公布号 US2005208430(A1) 申请公布日期 2005.09.22
申请号 US20040804552 申请日期 2004.03.19
申请人 COLBURN MATTHEW E;NITTA SATYANARAYANA V;PURUSHOTHAMAN SAMPATH 发明人 COLBURN MATTHEW E.;NITTA SATYANARAYANA V.;PURUSHOTHAMAN SAMPATH
分类号 G03F7/00;(IPC1-7):G03F7/00 主分类号 G03F7/00
代理机构 代理人
主权项
地址