| 摘要 |
<P>PROBLEM TO BE SOLVED: To manufacture a super-junction semiconductor device having ample breakdown voltage by a trench-embedding technique. <P>SOLUTION: An active region 100 is formed of a parallel pn layer comprising a first p-semiconductor layer 2b and a first n-semiconductor layer 2a that are equal in width and the total amount of impurities, and has a structure having a proper charge balance. A part parallel to the stripe of the parallel p-n layer of a non-active region 200 is formed of a second parallel p-n layer comprising a second p-semiconductor layer 3b with a width larger than that of the first p-semiconductor layer 2b and a second n-semiconductor layer 3a with a width smaller than that of the first n-semiconductor layer 2a, and has a structure with a charge imbalance, by increasing the total amount of impurities of the second p-semiconductor layer 3b more than that of the second n-semiconductor layer 3a. This structure is manufactured by one-time trench formation and one-time trench embedding epitaxial growth, by making the width and pitch of the trench for forming the second p-semiconductor layer 3b different from the width and pitch of the trench for forming the first p-semiconductor layer 2b. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
