METHOD FOR INSPECTION, PROCESS FOR MAKING ANALYTIC PIECE, METHOD FOR ANALYSIS, ANALYZER, PROCESS FOR PRODUCING SOI WAFER, AND SOI WAFER

摘要

A method for inspecting the internal state of an article (2) being inspected by measuring a conductor existing in an insulating base material (11) formed in the article (2) being inspected, comprising steps for irradiating the surface at a part of the base material (11) being inspected with ions or electrons and photographing the surface image by secondary electrons being emitted from the surface (11a) and the vicinity thereof, for etching the part being inspected and photographing the surface image by secondary electrons being emitted from the sequentially updated surface (11b) lower by an etched depth and the vicinity thereof, and for inspecting the internal state of the article (2) being inspected by measuring the conductor existing in the insulating base material (11) based on the accumulated surface images, thereby measuring a defect (conductor) existing in a silicon oxide film (base material) buried in an SOI wafer (article being inspected) accurately.