MAGNETORESISTIVE RANDOM ACCESS MEMORY AND DRIVING METHOD THEREFOR

摘要

PROBLEM TO BE SOLVED: To provide a magnetoresistive random access memory with which read errors are reduced as far as possible and a large reproduction signal can be obtained. SOLUTION: The driving method of a magnetoresistive random access memory having a memory cell which changes between binary resister values by the same write pulse comprises: a step for reading the resister value of the selected memory cell and making the read resister value a 1st resister value; a step for performing a 1st writing operation to the selected memory cell using a write pulse; a step for reading the resister value of the selected memory cell and making the read resister value a 2nd resister value; a step for comparing the 2nd resister value with the 1st resister value and deciding a data originally stored in the selected memory cell on the basis of the result of this comparison; and a step for performing 2nd write operation to the selected memory cell using the write pulse. COPYRIGHT: (C)2005,JPO&NCIPI