| 摘要 |
PROBLEM TO BE SOLVED: To provide a thermoelectric transducer with a higher performance than a conventional thermoelectric transducer. SOLUTION: The thermoelectric transducer 1 has such a structure that a metal layer 10, a semiconductor layer 11 and the metal layer 10 are joined sequentially, and the size of a Schottky barrier formed in a joint interface between the metal layer 10 and the semiconductor layer 11 is 0 to 0.4 eV. The thickness of the semiconductor layer 11 is set to 10 to 100 nm. Thus, the performance of the thermoelectric transducer 1 can be made higher than a thermoelectric transducer which is composed of a semiconductor superlattice and has a size of the Schottky barrier of 0 to 0.4 eV. COPYRIGHT: (C)2005,JPO&NCIPI |
