| 发明名称 |
Capacitor and method for fabricating the same |
| 摘要 |
A capacitor is formed on an interlayer insulating film formed on a semiconductor substrate. The capacitor includes a bottom electrode made of platinum, a capacitor insulating film made of SrTaBiO (SBT) containing an element absorbing hydrogen such as titanium, for example, in grain boundaries, inter-lattice positions or holes, and a top electrode made of platinum.
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| 申请公布号 |
US2005199928(A1) |
申请公布日期 |
2005.09.15 |
| 申请号 |
US20050117328 |
申请日期 |
2005.04.29 |
| 申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
MIKAWA TAKUMI;JUDAI YUJI;HAYASHI SHINICHIRO |
| 分类号 |
H01L21/316;H01L21/02;H01L21/8246;H01L27/105;H01L27/108;(IPC1-7):H01L29/76;H01L21/00 |
主分类号 |
H01L21/316 |
| 代理机构 |
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