Adjustable threshold isolation transistor

摘要

An method and apparatus for high voltage control of isolation region transistors ( 320 ) in an integrated circuit. Isolation region transistors ( 320 ) are formed between active devices by selective implantation of channel stop implants ( 140 ). Isolation region transistors ( 320 ) are those areas with a conductor ( 130 ) over an isolation region ( 120 ) with no channel stop implant ( 140 ). This provides an isolation region transistor ( 320 ) with a lower threshold voltage than the areas with channel stop implant ( 140 ). The voltage threshold of the isolation region transistors 320 are adjustable to a range of voltages by varying the length of channel stop implant ( 140 ). The apparatus may be fabricated using conventional fabrication processes.