发明名称 |
Method for manufacturing gate structure with sides of its metal layer partially removed |
摘要 |
A method for manufacturing a gate structure has the steps of providing a substrate; forming a conducting layer on the substrate; forming a metal layer on the conducting layer; forming a patterned first protective layer on the metal layer, the protective layer having a side surface; partially removing the side surface of the first protective layer to form a first gate element having a first gate pattern; transferring the first gate pattern to the metal layer to form a second gate element; conformally forming a second protective layer on the first gate element, the second gate element and the conducting layer, causing a second gate pattern; and transferring the second gate pattern to the conducting layer to form a third gate element.
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申请公布号 |
US6943099(B2) |
申请公布日期 |
2005.09.13 |
申请号 |
US20040768070 |
申请日期 |
2004.02.02 |
申请人 |
NANYA TECHNOLOGY CORPORATION |
发明人 |
KUAN SHIH-FAN;WU KUO-CHIEN |
分类号 |
H01L21/3205;H01L21/336;H01L21/4763;H01L21/8242;(IPC1-7):H01L21/320;H01L21/476 |
主分类号 |
H01L21/3205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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