发明名称 |
Semiconductor memory device with reduced chip area and improved redundancy efficency |
摘要 |
A redundancy circuit embedded in the semiconductor memory device includes a sector selector and a bit line selector. The bit line selector repairs defective bit lines and the sector selector repairs defective global bit lines and selectively repairs defective bit lines. The sector selector includes a fixed address cell storage box for storing addresses of the defective bit lines and a flexible address cell storage box for storing addresses of the defective global bit lines. The circuit area is minimized since the coding unit corresponding to a sector address is not included in the bit line selector. The repair rate of defective bit lines is improved since the sector selector operates selectively as the bit line selector.
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申请公布号 |
US6944085(B2) |
申请公布日期 |
2005.09.13 |
申请号 |
US20030376757 |
申请日期 |
2003.02.27 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE BYEONG-HOON;LEE SEUNG-KEUN |
分类号 |
G11C16/06;G11C16/04;G11C29/00;G11C29/04;(IPC1-7):G11C8/00 |
主分类号 |
G11C16/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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