Method of forming metal silicide film and method of manufacturing semiconductor device having metal silicide film

摘要

A metal-containing film is formed on a silicon-containing conductive region at a temperature where the metal of the metal-containing film and silicon of the semiconductor substrate react with each other to form a diffusion restraint interface film interposed between the metal-containing film and silicon of the and the semiconductor substrate. The resultant structure is annealed so that metal of the metal-containing film and silicon of the silicon-containing conductive region react with each other to form a metal silicide film.