发明名称 Plasma processing unit
摘要 According to the present invention, since the inside of a hole formed in a sidewall of a process vessel of a plasma processing unit is filled with a dielectric, a propagation rate of the electromagnetic wave to a pickup antenna is improved when an electromagnetic wave generated due to abnormality in plasma such as abnormal discharge is to be detected via the hole. Accordingly, it is possible to improve detection sensitivity without any change in size or length of the hole. Consequently, abnormal discharge in plasma processing can be detected with high accuracy.
申请公布号 US2005188922(A1) 申请公布日期 2005.09.01
申请号 US20050064012 申请日期 2005.02.24
申请人 TOKYO ELECTRON LIMITED. 发明人 ISHIBASHI KIYOTAKA;TIAN CAI ZHONG
分类号 C23C16/00;H01J37/32;(IPC1-7):C23C16/00 主分类号 C23C16/00
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