发明名称 |
BACKSIDE-ILLUMINATED PHOTODIODE ARRAY, METHOD FOR MANUFACTURING SAME, AND SEMICONDUCTOR DEVICE |
摘要 |
<p>The back illuminated photodiode array 1 comprises a semiconductor substrate 3 made of a first conductive type semiconductor, wherein a plurality of photodiodes are formed at an opposite side to an incident surface of light L to be detected of the semiconductor substrate 3. The opposite side of the semiconductor substrate 3 has a plurality of the recessed portions 4 formed in an array, and second conductive type semiconductor regions 5 composed of second conductive type semiconductor is formed at bottoms 4a of a plurality of the recessed portions 4 to form photodiodes arranged in an array. <IMAGE></p> |
申请公布号 |
EP1569275(A1) |
申请公布日期 |
2005.08.31 |
申请号 |
EP20030772879 |
申请日期 |
2003.11.18 |
申请人 |
HAMAMATSU PHOTONICS K.K. |
发明人 |
SHIBAYAMA, KATSUMI,;ISHIDA, MASAYUKI;YOKINO, TAKAFUMI |
分类号 |
G01T1/20;H01L27/14;H01L27/146;H01L31/0232;H01L31/09;H01L31/10;H04N5/32;H04N5/369;(IPC1-7):H01L27/14;H01L31/023 |
主分类号 |
G01T1/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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